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S1226-18BU日本滨松传感器原装HAMAMATSU Si photodiode for uv

日本滨松HAMAMATSU硅光电二极管 S1226-18BU TO-18 现货库存 Si photodiode S1226-18BU For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE＝75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability 用于紫外到可见光的精密光度测定；抑制近红外灵敏度特征 -高紫外灵敏度：QE＝75%（λ=200 nm） -抑制近红外灵敏度 -低暗电流 -高可靠性 Specifications Photosensitive area 1.1 × 1.1 mm Number of elements 1 Package Metal Package category TO-18 Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response range 190 to 1000 nm Peak sensitivity wavelength (typ.) 720 nm Photosensitivity (typ.) 0.36 A/W Dark current (max.) 2 pA Rise time (typ.) 0.15 μs Terminal capacitance (typ.) 35 pF Noise equivalent power (typ.) 1.6 × 10 -15 W / Hz 1/2 Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted 规格感光面积1.1×1.1mm 单位数量1 包装：铝箔袋包装类别：TO-18 冷却：非冷却反向电压（最大值）5 V 光谱响应范围190至1000 nm 峰值灵敏度波长（典型值）720nm 光敏性（典型值）0.36 A/W 暗电流（最大值）2 pA 上升时间（典型值）0.15μs 终端电容（典型值）35 pF 噪声等效功率（典型值）1.6×10-15 W/Hz 1/2 测量条件Ta=25℃，典型值，光敏度：λ=720nm，暗电流：VR=10mV，端子电容：VR=0V，f=10kHz，除非另有说明详细规格书请询问客服15989862032

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产品描述

日本滨松HAMAMATSU硅光电二极管 S1226-18BU TO-18 现货库存

Si photodiode

S1226-18BU

For UV to visible, precision photometry; suppressed near IR sensitivity

Features
- High UV sensitivity: QE＝75 % (λ=200 nm)
- Suppressed near IR sensitivity
- Low dark current
- High reliability

用于紫外到可见光的精密光度测定；抑制近红外灵敏度

特征

-高紫外灵敏度：QE＝75%（λ=200 nm）

-抑制近红外灵敏度

-低暗电流

-高可靠性

Specifications

Photosensitive area	1.1 × 1.1 mm
Number of elements	1
Package	Metal
Package category	TO-18
Cooling	Non-cooled
Reverse voltage (max.)	5 V
Spectral response range	190 to 1000 nm
Peak sensitivity wavelength (typ.)	720 nm
Photosensitivity (typ.)	0.36 A/W
Dark current (max.)	2 pA
Rise time (typ.)	0.15 μs
Terminal capacitance (typ.)	35 pF
Noise equivalent power (typ.)	1.6 × 10 -15 W / Hz 1/2
Measurement condition	Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted